Low Power Double Gate Fin FET Based Sense Amplifier

Analysis of Pocket Double Gate Tunnel Fet for Low Stand by Power Logic Circuits

For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leak...

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

Design A New Stable And Low Power Bandgap Reference Circuit Based On Fin-FET Device

This paper describes the design of a bandgap reference, implemented in 32 nm FinFET technology. The paper introduced new method for increasing stability of output voltage of bandgap circuit. In the proposed architecture extra feedback is used for setting the output voltage in fixed voltage. This feedback makesbandgap circuit more stable and speedy employing back gate biasing of the FinFET devic...

Double-Gate Tunnel FET With High-κ Gate Dielectric

In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...

Efficient Current Mode Sense Amplifier for Low Power SRAM

Sense amplifiers are one of the most vital circuits in the margin of CMOS memories. Their performance influences both memory access time and overall memory power dissipation. The existing Current-Mode Sense Amplifier coupled with a simplified read-cycle-only memory system has the ability to quickly amplify a small differential signal on the Bit-Lines (BLs) and Data-Lines (DLs) to the full CMOS ...